Monolithic p-i-n GaAlAs photorefractive devices

Author

Tayebati, P. ; Hantzis, C. ; Sacks, R.N.

Author_Institution

CoreTek Inc., Bedford, MA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

221

Abstract

Summary form only given. Photorefractive epitaxial devices are band-gap engineered, high speed, real-time holograms that operate by a combination of charge transport and resonant electrooptic nonlinearities in semiconductors. In this work we report successful demonstration of a number of monolithic photorefractive devices consisting of an MQW photorefractive device structure on a GaAlAs-AlAs quarter-wave stack mirror.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; electro-optical devices; energy gap; gallium arsenide; holographic gratings; mirrors; photorefractive materials; semiconductor quantum wells; GaAlAs-AlAs; GaAlAs-AlAs quarter-wave stack mirror; MQW photorefractive device structure; band-gap engineered high speed real-time holograms; charge transport; monolithic p-i-n GaAlAs photorefractive devices; monolithic photorefractive devices; photorefractive epitaxial devices; resonant electrooptic nonlinearities; semiconductors; Diffraction; Mirrors; PIN photodiodes; Photorefractive effect; Photorefractive materials; Quantum well devices; Reflectivity; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565207

Filename

565207