Title :
Tuning the luminescence emission in III-V self-forming quantum dots: influence of structure, material system and dot/barrier interface
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Tuning the emission in semiconductor quantum dots [QDs] has be attained using different strategies: by changing the material composition in the dot/barriers; interdiffusion or intermixing; using a graded growth rate; and changing the quantum box average dimensions and concentrations for fixed ternary compositions. The effects of these structural and compositional variations on the luminescence properties of these structures is presented and discussed
Keywords :
III-V semiconductors; chemical interdiffusion; interface structure; photoluminescence; self-assembly; semiconductor quantum dots; III-V self-forming quantum dots; compositional variations; dot/barrier interface; graded growth rate; interdiffusion; intermixing; luminescence emission; material composition; material system; quantum box average dimensions; structure; ternary compositions; tuning; Composite materials; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Laser tuning; Luminescence; Optical materials; Optical surface waves; Quantum dots; US Department of Transportation;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785106
