DocumentCode :
3052622
Title :
GaN nanocolumn light-emitters, growth, and optical characterization
Author :
Kishino, Katsumi ; Yanagihara, Ai ; Igawa, Y. ; Ikeda, Ken-ichi ; Ozaki, Takashi ; Ishizawa, Shunsuke ; Yamano, Koji ; Vadivelu, R.
Author_Institution :
Sophia Univ., Tokyo, Japan
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
Selective area growth of GaN nanocolumn arrays on Si substrates was developed. Orange-emitting nanocolumns on GaN/Al2O3 templates were optically characterized, fabricating red-color InGaN-based nanocolumn LEDs. Successful monolithic integration of four emission-colors nanocolumn LEDs was demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; integrated optics; light emitting diodes; nanofabrication; nanostructured materials; wide band gap semiconductors; GaN nanocolumn arrays; GaN nanocolumn light-emitters; GaN-Al2O3-Si; InGaN; Si; Si substrates; four emission-colors nanocolumn LED; monolithic integration; optical characterization; orange-emitting nanocolumns; red-color InGaN-based nanocolumn LED; selective area growth; Gallium nitride; Light emitting diodes; Monolithic integrated circuits; Optical device fabrication; Silicon; Stimulated emission; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6599923
Filename :
6599923
Link To Document :
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