DocumentCode
305274
Title
Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE
Author
Morkoc, Hadis
Author_Institution
Wright Lab., Univ. of Illinios, IL, USA
Volume
1
fYear
1996
fDate
18-21 Nov. 1996
Abstract
GaN and related binaries and alloys have received a great deal of attention owing to their direct bandgaps which are conducive for emitters and detectors in the portion of the spectrum from green to UV. In this presentation, pathways leading to defect reduction, primarily in bulk films and quantum wells grown by MBE, as gauged by optical probes are discussed.
Keywords
III-V semiconductors; luminescence; molecular beam epitaxial growth; optical properties; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; wide band gap semiconductors; GaN; MBE growth; defect reduction; detectors; emitters; optical probes; optical properties; quantum wells; wide bandgap nitride semiconductor heterostructures; Conducting materials; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Optical films; Photonic band gap; Semiconductor lasers; Stimulated emission; Substrates; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565226
Filename
565226
Link To Document