Title :
Optical properties of wide bandgap nitride semiconductor heterostructures grown by MBE
Author_Institution :
Wright Lab., Univ. of Illinios, IL, USA
Abstract :
GaN and related binaries and alloys have received a great deal of attention owing to their direct bandgaps which are conducive for emitters and detectors in the portion of the spectrum from green to UV. In this presentation, pathways leading to defect reduction, primarily in bulk films and quantum wells grown by MBE, as gauged by optical probes are discussed.
Keywords :
III-V semiconductors; luminescence; molecular beam epitaxial growth; optical properties; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; wide band gap semiconductors; GaN; MBE growth; defect reduction; detectors; emitters; optical probes; optical properties; quantum wells; wide bandgap nitride semiconductor heterostructures; Conducting materials; Gallium nitride; Light emitting diodes; Molecular beam epitaxial growth; Optical films; Photonic band gap; Semiconductor lasers; Stimulated emission; Substrates; Thermal conductivity;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565226
