Title :
Optical processes in InxGa1-xN epitaxial films grown by metalorganic chemical vapor deposition
Author :
Shan, W. ; Ager, J.W., III ; Walukiewicz, W. ; Haller, E.E.
Author_Institution :
Div. of Mater. Sci., Lawrence Berkeley Lab., CA, USA
Abstract :
We have studied the properties of optical transitions in Inx Ga1-xN epitaxial films (0<x<0.2) grown by metalorganic chemical vapor deposition (MOCVD). The fundamental band gap energies of the InxGa1-xN alloys were determined using photomodulation spectroscopy measurements and the variation of the fundamental band gap was measured as a function of temperature. The effects of pressure on the photoluminescence (PL) emission lines were studied. Our results show that PL originates from effective-mass conduction-band states. The anomalous temperature dependence of the PL peak shift and linewidth and of the Stokes shift between the photoreflectance (PR) and PL lines is explained by composition fluctuations in as-grown InGaN alloys
Keywords :
III-V semiconductors; MOCVD; conduction bands; effective mass; energy gap; gallium compounds; indium compounds; modulation spectra; photoluminescence; photoreflectance; semiconductor epitaxial layers; semiconductor growth; spectral line breadth; vapour phase epitaxial growth; MOCVD; SiC; Stokes shift; anomalous temperature dependence; composition fluctuations; effective-mass conduction-band states; epitaxial films; fundamental band gap energies; optical transitions; photoluminescence; photomodulation spectroscopy; photoreflectance; Chemical vapor deposition; Energy measurement; Fluctuations; Gallium alloys; MOCVD; Optical films; Photoluminescence; Photonic band gap; Spectroscopy; Temperature dependence;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785116
