DocumentCode
3052889
Title
Time-resolved laser spectroscopy of wide band gap semiconductors
Author
Long, Frederick H. ; Pophristic, Milan ; Tran, Chuong ; Kalicek, Robert F., Jr. ; Feng, Zhe Chuan ; Ferguson, Ian
Author_Institution
Dept. of Chem., Rutgers Univ., Piscataway, NJ, USA
fYear
1998
fDate
1998
Firstpage
263
Lastpage
266
Abstract
We present time-resolved photoluminescence measurements of InGaN MQWs, films, LEDs and SiC
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor quantum wells; semiconductor thin films; silicon compounds; time resolved spectra; InGaN; InGaN MQWs; LEDs; SiC; films; time-resolved laser spectroscopy; time-resolved photoluminescence; wide band gap semiconductors; Band pass filters; Chemical lasers; Kinetic theory; Laser modes; Light emitting diodes; Quantum well devices; Semiconductor lasers; Silicon carbide; Spectroscopy; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785121
Filename
785121
Link To Document