Title :
Understanding and engineering of carrier transport in advanced MOS channels
Author :
Takagi, Shinichi
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo
Abstract :
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, we review the basic concept on the choice of channel materials for high performance MOSFETs and address several important issues on carrier transport properties of mobility-enhanced CMOSFETs, including the effects of uniaxial strain on Si n-MOSFETs and the critical issues on Ge/III-V MOSFETs.
Keywords :
MOSFET; carrier mobility; MOS channels; MOSFET; carrier transport; mobility enhancement; CMOS technology; CMOSFETs; III-V semiconductor materials; MOSFET circuits; Uniaxial strain; Ge; III–V semiconductors; MOSFETs; channel; mobility; scattering; strain; subband; velocity;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648224
