Title :
The effects of blocking the lateral current flow in multiple-quantum-well ridge waveguide lasers
Author :
Letal, G.J. ; Elenkrig, B.B. ; Simmons, J.G.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
The effect of blocking the lateral current flow in a multiple-quantum well InGaAsP-InP ridge waveguide laser is examined theoretically both for different ridge widths and for various transverse (growth direction) optical confinement factors. It is shown that depending on the optical confinement factor or on the number of wells, the blocking of the lateral current can either increase or decrease the threshhold current of the laser.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; gallium compounds; indium compounds; laser theory; quantum well lasers; ridge waveguides; semiconductor device models; waveguide lasers; InGaAsP-InP; InGaAsP-InP ridge waveguide laser; lateral current flow blocking effects; multiple-quantum-well ridge waveguide lasers; optical confinement factor; ridge widths; threshhold current; transverse growth direction optical confinement factors; well number; Laser modes; Laser theory; Optical losses; Optical materials; Optical pumping; Optical waveguides; Quantum well devices; Semiconductor lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565255
