Title :
MBE growth, structural studies and a new optical phenomenon in CdF 2-CaF2:Eu superlattices on Si(111)
Author :
Sokolov, N.S. ; Gastev, S.V. ; Khilko, A.Yu. ; Kyutt, R.N. ; Sorokin, L.M. ; Suturin, S.M. ; Vcherashnii, D.B. ; Brown, P.D. ; Humphryes, C.J.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
New CdF2-CaF2:Eu superlattices (SLs) were grown from molecular beams and structurally characterized by high resolution X-ray diffractometry and high resolution transmission electron microscopy (HRTEM). A new optical phenomenon in luminescence of Eu2+ ions in the SLs was revealed. It was found that the Eu 2+ luminescence intensity under continuous optical excitation drastically decreases in a few seconds after the beginning of the excitation. Possible application of the phenomenon in optical memory cells is discussed
Keywords :
X-ray diffraction; cadmium compounds; calcium compounds; europium; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor superlattices; transmission electron microscopy; CdF2-CaF2:Eu superlattices on Si[111]; Eu2+ luminescence intensity; MBE growth; SiC; continuous optical excitation; high resolution X-ray diffractometry; high resolution transmission electron microscopy; luminescence; optical memory cells; Electron beams; Electron optics; Laser sintering; Luminescence; Molecular beam epitaxial growth; Optical interferometry; Optical superlattices; Particle beam optics; Surface morphology; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785131
