DocumentCode
3053209
Title
InGaAs nano-photodetectors based on photonic crystal waveguide including ultracompact buried heterostructure
Author
Nozaki, Kengo ; Matsuo, Shoichiro ; Takeda, Kenji ; Sato, Takao ; Kuramochi, E. ; Notomi, M.
Author_Institution
NTT Nanophotonics Center, NTT Corp., Atsugi, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
InGaAs nano-photodetectors using a photonic crystal waveguide were demonstrated for the first time to realize photoreceivers with small junction capacitance. 1-A/W responsivity and a 10-Gb/s eye pattern were confirmed for the 3-μm-long device.
Keywords
III-V semiconductors; buried layers; gallium arsenide; indium compounds; nanophotonics; nanosensors; optical receivers; optical waveguides; photodetectors; photonic crystals; InGaAs; bit rate 10 Gbit/s; eye pattern; nanophotodetectors; photonic crystal waveguide; photoreceivers; size 3 mum; small junction capacitance; ultracompact buried heterostructure; Absorption; Capacitance; Indium gallium arsenide; Junctions; Optical device fabrication; Optical interconnections; Optical waveguides;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6599949
Filename
6599949
Link To Document