Low threshold Al/sub x/O/sub y/-confined VCSELs and densely-packed arrays

Author

Huffaker, D.L. ; Graham, L.A. ; Deng, H. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

384

Abstract

Summary form only given. In this talk we describe recent results in achieving lasing wavelength control in selectively oxidized AlAs-GaAs DBR QW VCSEL arrays, as well as reduction in lasing threshold. To demonstrate the wavelength control, we used a scanning electron microscope of a 2x2 array in which the lateral sizes of the individual VCSELs are varied in 0.5 /spl mu/m steps from 3.0 /spl mu/m to 1.5 /spl mu/m. The lateral cavity dimensions are set by the sizes of GaAs mesas that serve as oxidation masks.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; optical losses; oxidation; quantum well lasers; scanning electron microscopy; semiconductor laser arrays; 3 to 1.5 mum; Al/sub x/O/sub y/-confined VCSELs; AlAs-GaAs; AlAs-GaAs DBR QW VCSEL arrays; GaAs mesas; VCSELs; densely-packed arrays; lasing threshold; lasing wavelength control; lateral cavity dimensions; lateral sizes; low threshold; oxidation masks; scanning electron microscope; selectively oxidized; Distributed Bragg reflectors; Etching; Loss measurement; Scanning electron microscopy; Temperature; Vertical cavity surface emitting lasers; Wavelength measurement; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565294

Filename

565294