MBE-grown strained AlInGaAs/AlGaAs vertical cavity lasers with low threshold currents and high output power

Author

Ko, Jack ; Thibeault, Brian J. ; Akulova, Yuliya ; Hegblom, Eric R. ; Young, Bruce D. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

388

Abstract

In conclusion, we demonstrated room temperature CW operation of MBE-grown strained AlInGaAs-AlGaAs top-emitting VCLs. We have obtained a low CW threshold current of 1.3 mA for a 7 /spl mu/m/spl times/7 /spl mu/m device without post-growth annealing. In addition, a high output power of 5.5 mW with 51% differential quantum efficiency was obtained from an 11 /spl mu/m/spl times/11 /spl mu/m device.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.3 mA; 11 mum; 5.5 mW; 51 percent; 7 mum; AlInGaAs-AlGaAs; MBE-grown; differential quantum efficiency; high output power; low CW threshold current; low threshold currents; post-growth annealing; room temperature CW operation; strained AlInGaAs-AlGaAs top-emitting VCLs; strained AlInGaAs-AlGaAs vertical cavity lasers; Annealing; Apertures; Etching; Gallium arsenide; Molecular beam epitaxial growth; Oxidation; Pump lasers; Solid lasers; Substrates; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565296

Filename

565296