DocumentCode
305341
Title
High-speed, low-noise resonant-cavity avalanche photodiodes
Author
Nie, Hui ; Anselm, K.A. ; Hu, C. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume
1
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
392
Abstract
In this paper we describe a separate absorption and multiplication (SAM) avalanche photodiode (APD) in a resonant-cavity configuration. This APD has achieved low noise and record bandwidths. In the low-gain regime, bandwidths >20 GHz were observed. The gain-bandwidth product was 130 GHz, which is the highest reported for a bulk multiplication region and comparable to the best multiple-quantum-well APDs.
Keywords
avalanche photodiodes; optical noise; optical resonators; semiconductor device noise; bulk multiplication region; gain-bandwidth product; high-speed low-noise resonant-cavity avalanche photodiodes; low noise; low-gain regime; record bandwidths; resonant-cavity configuration; separate absorption and multiplication avalanche photodiode; Absorption; Avalanche photodiodes; Bandwidth; Breakdown voltage; Charge carrier processes; Ionization; Mirrors; Optical noise; Resonance; Signal to noise ratio;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565298
Filename
565298
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