DocumentCode :
3053454
Title :
Controlling inhibited spontaneous emission of InAs/InP nanowires in different environment
Author :
Birowosuto, M.D. ; Zhang, Ge ; Yokoo, A. ; Takiguchi, M. ; Notomi, M.
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Atsugi, Japan
fYear :
2013
fDate :
June 30 2013-July 4 2013
Firstpage :
1
Lastpage :
2
Abstract :
We experimentally investigate the inhibited spontaneous emission of telecom-band InAs quantum disks in InP nanowires near gold, SiO2, and silicon interfaces. We have evaluated how the inhibition is affected by different interfaces and disk thickness.
Keywords :
III-V semiconductors; gold; indium compounds; nanowires; semiconductor quantum wires; silicon compounds; spontaneous emission; Au; InAs-InP; SiO2; disk thickness; inhibited spontaneous emission; nanowires; telecom-band quantum disks; Films; Gold; Indium phosphide; Nanowires; Silicon; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
Type :
conf
DOI :
10.1109/CLEOPR.2013.6599959
Filename :
6599959
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3053454
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