Title :
Photoluminescence flash induced by intense single-cycle terahertz pulses in undoped GaAs quantum wells
Author :
Shinokita, K. ; Hirori, H. ; Tanaka, Kiyoshi ; Mochizuki, Takashi ; Kim, Chong-Kwon ; Akiyama, Hidenori ; Pfeiffer, L.N. ; West, K.W.
Author_Institution :
Dept. of Phys., Kyoto Univ., Kyoto, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Intense terahetz pulses induce a photoluminescence flashes from undoped GaAs/AlGaAs quantum wells under continuous wave laser excitation. This result indicates that the number of excitons increases 10000-fold from that of the steady state.
Keywords :
III-V semiconductors; aluminium compounds; excitons; gallium arsenide; laser beam effects; photoluminescence; semiconductor quantum wells; terahertz wave generation; GaAs-AlGaAs; continuous wave laser excitation; excitons; intense single-cycle terahertz pulses; photoluminescence flash; undoped quantum wells; Educational institutions; Electric fields; Excitons; Gallium arsenide; Laser excitation; Photoluminescence; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599985
