Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green’s function

Gate-leakage current from quasi-bound states in highly scaled metal-oxide-semiconductor devices has been investigated by using a non-equilibrium Greenpsilas function method. We have taken account of the realistic band structure of Si with anisotropic effective masses. This study also presents a model for the efficient simulation of gate-leakage current with open boundaries where no escape time or life time has been assumed contrary to the conventional analysis [1]. We have added optical potential to the on-site energies only above the conduction band edge in the substrate electrode. The optical potential induces energy broadening in the triangle potential to calculate the density of states properly.