Title :
Analysis of direct tunneling current from quasi-bound states in n-MOSFET based on non-equilibrium Green’s function
Author :
Muraoka, Satoru ; Souma, Satofumi ; Ogawa, Matsuto
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe
Abstract :
Gate-leakage current from quasi-bound states in highly scaled metal-oxide-semiconductor devices has been investigated by using a non-equilibrium Greenpsilas function method. We have taken account of the realistic band structure of Si with anisotropic effective masses. This study also presents a model for the efficient simulation of gate-leakage current with open boundaries where no escape time or life time has been assumed contrary to the conventional analysis [1]. We have added optical potential to the on-site energies only above the conduction band edge in the substrate electrode. The optical potential induces energy broadening in the triangle potential to calculate the density of states properly.
Keywords :
Green´s function methods; MOSFET; band structure; elemental semiconductors; silicon; tunnelling; Si; direct tunneling current; gate-leakage current; metal-oxide-semiconductor devices; n-MOSFET; nonequilibrium Greens function; optical potential induces energy; realistic band structure; substrate electrode; Analytical models; Anisotropic magnetoresistance; Effective mass; Electrodes; Electrons; Electrostatics; Green´s function methods; MOS devices; MOSFET circuits; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648277