Title :
First-principles calculations for effects of Fluorine impurity in GaN
Author :
Lu, Jing ; Gao, Mingzhi ; Zhang, Jinyu ; Wang, Yan ; Yu, Zhiping
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing
Abstract :
Fluoride-based plasma treatment has been approved to be an effective technique to make E-Mode GaN-based HEMT by experiments. However, the detailed effect of Fluorine doping in GaN and AlGaN is still unclear and has never been studied theoretically. In this paper, F impurity in GaN material is firstly studied by First Principle Calculations. Sound explanations for the experimental phenomenon are derived from the results and further discuss is presented.
Keywords :
Fermi level; III-V semiconductors; ab initio calculations; aluminium compounds; electronic density of states; fluorine; gallium compounds; impurity states; semiconductor doping; vacancies (crystal); wide band gap semiconductors; AlGaN:F; E-Mode HEMT; Fermi level; GaN:F; doping; first-principles calculations; formation energies; impurity; partial orbital of density of state; plasma treatment; vacancy; Aluminum gallium nitride; Doping; Gallium nitride; HEMTs; Impurities; Microelectronics; Orbital calculations; Photonic band gap; Plasma materials processing; Radio frequency; Defects; F impurity; First-principles calculation; GaN;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
Conference_Location :
Hakone
Print_ISBN :
978-1-4244-1753-7
DOI :
10.1109/SISPAD.2008.4648280
