• DocumentCode
    3054499
  • Title

    Air-spacer Self-Aligned Contact MOSFET for future dense memories

  • Author

    Park, Jemin ; Hu, Chenming

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA
  • fYear
    2008
  • fDate
    9-11 Sept. 2008
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    An air-spacer SAC (self-aligned contact) transistor is proposed. Air-spacer is created by removing the nitride spacer after the SAC plug has been formed. 3D mixed mode simulation shows that the 35% area benefit can be retained while improving the speed to be 10% better than a non-SAC device and switching energy to 82%.
  • Keywords
    MOSFET; 3D mixed mode simulation; air-spacer self-aligned contact MOSFET; dense memories; nitride spacer; switching energy; Capacitance; Computational modeling; Contacts; Dielectrics; Etching; Intrusion detection; MOSFET circuits; Plugs; Random access memory; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 2008. SISPAD 2008. International Conference on
  • Conference_Location
    Hakone
  • Print_ISBN
    978-1-4244-1753-7
  • Type

    conf

  • DOI
    10.1109/SISPAD.2008.4648300
  • Filename
    4648300
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3054499