• DocumentCode
    3055455
  • Title

    Surface-potential-based compact model of dynamically depleted SOI MOSFETs

  • Author

    Yao, W. ; Wu, W. ; Gildenblat, G.

  • Author_Institution
    Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    PSP-based compact model of dynamically depleted SOI MOSFETs has been developed and verified using TCAD simulations. This development adopts the symmetric linearization method to the dynamically depleted SOI operation while retaining the highly developed description of the small geometry effects in the PSP models. The model has been implemented in circuit simulators, benchmarked and tested for convergence.
  • Keywords
    MOSFET; semiconductor device models; silicon-on-insulator; technology CAD (electronics); PSP models; TCAD simulations; circuit simulation; dynamically depleted SOI MOSFET; geometry effects; surface-potential-based compact model; symmetric linearization method; Capacitance; Educational institutions; Equations; Geometry; MOSFETs; Semiconductor films; Silicon; Solid modeling; Standards development; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378081
  • Filename
    5378081
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3055455