Mobility measurements in Gd silicate/TiN SOI and sSOI n-MOSFETs

Future CMOS technology generations require novel materials in the front end of device fabrication to overcome physical limits of the classical silicon/silicon dioxide based system and to keep control over channel charge: 1.) High-k dielectrics and metal gate electrodes enable scaling of the equivalent oxide thickness maintaining reasonable gate leakage currents. 2.) Thin, fully depleted silicon on insulator (SOI) substrates provide enhanced gate to channel coupling. 3.) Strained channels with increased carrier mobility boost device performance.