Characteristics of InAs quantum dot superluminescent diodes utilizing trench structures

In this paper, the trench structure of J-shaped superluminescent diodes (SLDs) was utilized in order to avoid optical power loss with week index waveguides. Electroluminescence (EL) were measured with the increase of injection current. The EL peaks were normalized to the peak intensity of the ground state. Without trench structure the increase in peak intensity of the excited state would not have occurred. It was believed that the SLDs optical power increase was closely related to the increase of the intensity peak at excited state.