• DocumentCode
    3056367
  • Title

    Reliable resistive switching device based on bi-layers of ZrOx/HfOx films

  • Author

    Lee, J. ; Lee, W. ; Jo, M. ; Park, J. ; Seong, D.-J. ; Jung, S. ; Kim, S. ; Shin, J. ; Park, S. ; Hwang, H.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In the conclusion, we demonstrated excellent uniformity and reliability of ZrO¿/HfO¿ bi-layers device. These excellent electrical and reliability properties of ZrO¿/HfO¿ bi-layers device show promise for future high density non-volatile memory application.
  • Keywords
    hafnium compounds; semiconductor device reliability; semiconductor devices; switches; zirconium compounds; ZrOx-HfOx; electrical properties; films bi-layers; high density non-volatile memory; reliability properties; resistive switching device reliability; Hafnium oxide; Nonvolatile memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378123
  • Filename
    5378123
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3056367