Title :
A 12-GHz high output power amplifier using 0.18µm SiGe BiCMOS for low power applications
Author :
Kumar, Thangarasu Bharatha ; Kaixue Ma ; Kiat Seng Yeo ; Wei Meng Lim
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
This paper presents a fixed gain high output power amplifier with performance determined by using on-wafer measurement. The amplifier is fully differential based on inductive load and resistive degeneration which is designed using a 0.18 μm SiGe BiCMOS process. The amplifier achieves power gain of 7.2 dB, 3-dB bandwidth of 2.06 GHz, operating frequency of 12 GHz, power consumption of 12 mW using 1.8 V supply voltage and the input referred 1-dB gain compression point of -1.6 dBm. The designed amplifier occupies a die area of 380 μm × 340 μm.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar MMIC; differential amplifiers; low-power electronics; microwave power amplifiers; SiGe; SiGe BiCMOS process; bandwidth 2.03 GHz; fixed gain high output power amplifier; frequency 12 GHz; fully differential amplifier; gain 7.2 dB; inductive load; low power applications; on-wafer measurement; power 12 mW; resistive degeneration; size 0.18 mum; voltage 1.8 V; Gain; Gain measurement; Power amplifiers; Power demand; Power generation; Power measurement; Semiconductor device measurement;
Conference_Titel :
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1728-4
DOI :
10.1109/APCCAS.2012.6419001
