Title :
Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs
Author :
Guangle Zhou ; Kabeer, S. ; Wheeler, D. ; Seabaugh, A. ; Huili Xing
Author_Institution :
Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this paper, improved modulation of heavily-doped thin-body p+InGaAs channels is observed at 77 K over room temperature. A depletion-mode MISFET model was used to analyze the transport.
Keywords :
III-V semiconductors; MISFET; indium compounds; semiconductor doping; tunnel transistors; tunnelling; InGaAs; depletion-mode MISFET; field modulation; tunnel FET; Current measurement; Dielectrics; Electrical resistance measurement; FETs; Gold; Hall effect; Indium phosphide; Length measurement; MISFETs; MOSFETs;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
DOI :
10.1109/ISDRS.2009.5378147
