Title :
An analysis of output ripples for PMOS charge pumps and design methodology
Author :
Boy-Yiing Jaw ; Hongchin Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
An analysis of output ripples for PMOS charge pumps is presented. Since the on-resistance of switching transistor plays an important role, the analytical model including this effect is derived and extensively verified by simulations using the 0.35 μm CMOS technology with errors within 7%. The measurement results also agree with the simulations. Based on the model, the guidelines to select the boosting capacitors, on-die output filtering capacitor and the optimized transistor sizes at the output stage are proposed. It would be helpful to design reduced-ripple PMOS charge pumps with good power efficiency and high boosted voltages.
Keywords :
CMOS integrated circuits; MOS integrated circuits; capacitors; charge pump circuits; CMOS technology; analytical model; boosted voltages; boosting capacitors; design methodology; design reduced-ripple PMOS charge pumps; on-die output filtering capacitor; on-resistance; optimized transistor sizes; output ripples; output stage; power efficiency; switching transistor; Capacitors; Charge pumps; Clocks; Integrated circuit modeling; Semiconductor device modeling; Transistors; Voltage measurement;
Conference_Titel :
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1728-4
DOI :
10.1109/APCCAS.2012.6419062
