Variation analysis of TiN FinFETs

Author

Endo, K. ; Matsukawa, T. ; Ishikawa, Y. ; Liu, Y.X. ; O´uchi, S. ; Sakamoto, K. ; Tsukada, J. ; Yamauchi, H. ; Masahara, M.

Author_Institution

Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

IN this paper, various FinFETs with the different fin-width and gate-length were fabricated and characterised using SEM and cross-sectional STEM imaging. It was found that the standard deviations of the V_th of the pMOS and nMOS FinFETs are almost the same and the main V_th variation source was the work function variation of the TiN metal gate. Also, the on-current variation for TiN FinFETs was predominated by the V_th variation. Thus, the reduction of the work function variation of the metal-gate FinFETs is the key for stabilizing the characteristics of the FinFETs and improving circuit performance.

Keywords

MOSFET; scanning electron microscopy; scanning-transmission electron microscopy; titanium compounds; work function; SEM; TiN; V_th variation source; cross-sectional STEM imaging; fin-width; gate-length; metal gate; nMOS FinFETs; on-current variation; pMOS FinFETs; work function variation; CMOS technology; Circuit stability; Doping; Educational institutions; Fabrication; FinFETs; MOS devices; MOSFET circuits; Nanoelectronics; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378198

Filename

5378198