W band silicon dielectric resonator for semiconductor substrate characterization

Author

Blondy, P. ; Cros, D. ; Guillon, P. ; Balleras, F. ; Massit, C.

Author_Institution

Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1349

Abstract

This paper is about the use of planar millimeter wave whispering gallery dielectric resonator modes for material characterization. Experimental results and theoretical ones obtained with finite element method permit to determine electromagnetic characteristics of a material like silicon. The results on loss factor are compared to basic electromagnetic theory. It is shown that high resistivity silicon dielectric resonators could be used to build high Q millimeter wave resonators.

Keywords

dielectric resonators; elemental semiconductors; finite element analysis; millimetre wave measurement; silicon; substrates; Si; W-band; electromagnetic characteristics; finite element method; loss factor; planar millimeter wave whispering gallery silicon dielectric resonator; semiconductor substrate; Conductivity; Conductors; Dielectric loss measurement; Dielectric losses; Dielectric materials; Dielectric substrates; Frequency; Millimeter wave technology; Permittivity; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700624

Filename

700624