• DocumentCode
    3058980
  • Title

    Physical model and mesh-size dependence in drift-diffusion simulations for single-event effects by heavy ions

  • Author

    Shibano, Nozomi ; Sano, Nobuyuki ; Tosaka, Yoshiharu ; Furuta, Hiroshi ; Tsutsui, Masafumi ; Imamura, Takeshi

  • Author_Institution
    Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In summary, we have constructed a mesh-generation scheme appropriate for arbitrary ion tracks in 3D DD simulations for SEEs and shown that the transient current response is sensitive to the mesh-size and physical models employed in DD simulations.
  • Keywords
    circuit simulation; mesh generation; transient response; arbitrary ion tracks; drift-diffusion simulations; heavy ions; mesh-generation scheme; mesh-size dependence; physical model; single-event effects; transient current response; CMOS logic circuits; CMOS technology; Charge carrier density; Circuit simulation; Educational institutions; Gold; Mesh generation; Paper technology; Physics; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378238
  • Filename
    5378238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3058980