Title :
GaN laser structure with semipolar quantum wells and embedded nanostripes
Author :
Leute, R.A.R. ; Meisch, T. ; Wang, Jiacheng ; Biskupek, J. ; Kaiser, U. ; Muller, Mathias ; Veit, P. ; Bertram, F. ; Christen, J. ; Scholz, F.
Author_Institution :
Inst. of Optoelectron., Ulm Univ., Ulm, Germany
fDate :
June 30 2013-July 4 2013
Abstract :
Using nanoimprint lithography, we fabricate GaN nano-structures with semipolar quantum wells on 2-inch c-oriented substrates and embed them within a planar waveguide to create a separate confinement heterostructure. Electroluminescence, transmission electron microscopy (TEM) and spatially resolved cathodoluminescence inside a scanning TEM (STEM-CL) is applied.
Keywords :
III-V semiconductors; cathodoluminescence; electroluminescence; gallium compounds; nanolithography; nanophotonics; optical fabrication; optical waveguides; quantum well lasers; scanning-transmission electron microscopy; semiconductor quantum wells; soft lithography; transmission electron microscopy; waveguide lasers; wide band gap semiconductors; GaN; STEM-CL; confinement heterostructure; electroluminescence; embedded nanostripes; gallium nitride laser structure; nanoimprint lithography; optical fabrication; planar waveguide; scanning TEM; semipolar quantum wells; size 2 in; spatially resolved cathodoluminescence; transmission electron microscopy; Aluminum gallium nitride; Gallium nitride; Light emitting diodes; Substrates; Transmission electron microscopy;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600215
