DocumentCode
3059124
Title
Room temperature UV lasing from photopumped ZnCdS/ZnS quantum wells
Author
Ozanyan, K.B. ; Nicholls, J.E. ; O´Neill, M. ; May, L. ; Hogg, J.H.C. ; Hagston, W.E. ; Lunn, B. ; Ashenford, D.E.
Author_Institution
Dept. of Appl. Phys., Hull Univ., UK
fYear
1996
fDate
35354
Firstpage
42552
Lastpage
42555
Abstract
We demonstrate optically pumped lasing at room temperature from ZnS/ZnCdS QW structures grown on (100) GaP substrates by MBE. In the structures with the lowest Cd-composition, lasing at wavelengths as low as 333 nm (at 8 K) is observed. We present spectroscopic evidence which suggests that the stimulated emission involves states in the low-energy tail of an inhomogeneously broadened excitonic resonance. While the gain is excitonic at low thresholds, a transition to an electron-hole plasma mechanism may occur if the pump power approaches 100 kW.cm-2
Keywords
zinc compounds; 300 K; 333 nm; 8 K; GaP; GaP substrates; MBE growth; QW structures; UV lasing; ZnCdS-ZnS; ZnCdS/ZnS quantum wells; electron-hole plasma mechanism; excitonic gain; inhomogeneously broadened excitonic resonance; lasing; low-energy tail; optically pumped lasing; pump power; room temperature; spectroscopic evidence; stimulated emission;
fLanguage
English
Publisher
iet
Conference_Titel
Wide Bandgap Semiconductor Light Emitters (Digest No: 1996/233), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19961228
Filename
641912
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