Title :
P-type and undoped InGaN across the entire alloy composition range
Author :
Wang, Kangping ; Araki, Takeshi ; Yu, K.M. ; Katsuki, Takayuki ; Mayer, M.A. ; Alarcon-Llado, E. ; Ager, J.W. ; Walukiewicz, W. ; Nanishi, Y.
Author_Institution :
Dept. of Photonics, Ritsumeikan Univ., Kusatsu, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We report a systematic study on undoped and Mg-doped InGaN grown by molecular beam epitaxy. Various experiments have been combined to demonstrate p-type InGaN across the entire alloy composition range.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; magnesium; molecular beam epitaxial growth; semiconductor epitaxial layers; wide band gap semiconductors; InGaN; InGaN:Mg; Mg-doped InGaN; alloy composition; molecular beam epitaxy; p-type InGaN; undoped InGaN; Conferences; Electrooptical waveguides; Lasers and electrooptics;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600220
