Title :
Characterization of Boron Nitride thin films
Author :
Chubarov, M. ; Pedersen, H. ; Hogberg, H. ; Filippov, S. ; Engelbrecht, J.A.A. ; O´Connel, J. ; Henry, Amanda
Author_Institution :
Dept. of Phys., Chem. & Biol., Linkoping Univ., Linköping, Sweden
fDate :
June 30 2013-July 4 2013
Abstract :
Rhombohedral Boron Nitride layers were grown on sapphire substrate in a hot-wall CVD reactor. The characterization of those layers is reported and the results are discussed in correlation with the various growth parameters used.
Keywords :
CVD coatings; III-V semiconductors; Raman spectra; aluminium compounds; boron compounds; epitaxial growth; infrared spectra; semiconductor epitaxial layers; semiconductor growth; Al2O3; BN; growth parameter; hot wall CVD reactor; rhombohedral layers; Boron; Epitaxial growth; III-V semiconductor materials; Substrates; X-ray scattering;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600222
