Title :
Low cost coplanar 77 GHz single-balanced mixer using ion-implanted GaAs Schottky diodes
Author :
Shimon, R. ; Caruth, D. ; Middleton, J. ; Hsia, Hsi-Sheng ; Feng, Ming
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
A W-band single-balanced mixer and W-band LO amplifier, suitable for automotive collision-avoidance radar, have been designed and fabricated using a 0.18 /spl mu/m direct ion-implanted GaAs MESFET process developed at the University of Illinois at Urbana-Champaign. As a downconverter with an LO frequency of 77 GHz and an RF frequency of 77.1 GHz, the coplanar rat-race mixer achieves a conversion loss of 14.7 dB at an LO power of +3.5 dBm. The coplanar LO amplifier exhibits 5 dB of gain over a 4 GHz bandwidth centered at 77 GHz.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; MMIC mixers; Schottky diode mixers; field effect MIMIC; gallium arsenide; ion implantation; millimetre wave amplifiers; millimetre wave mixers; radar equipment; 0.18 micron; 14.7 dB; 4 GHz; 5 dB; 77 GHz; EHF; GaAs; LO amplifier; W-band; automotive collision-avoidance radar; coplanar rat-race mixer; downconverter; ion-implanted GaAs MESFET process; ion-implanted GaAs Schottky diodes; low cost coplanar mixer; single-balanced mixer; Automotive engineering; Costs; Frequency conversion; Gain; Gallium arsenide; MESFETs; Mixers; Radar; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700645
