DocumentCode
3061003
Title
High Power 1100–1200 nm Semiconductor Disk Lasers
Author
Leinonen, Tomi ; Kantola, E. ; Ranta, S. ; Tavast, Miki ; Korpijarvi, V.-M. ; Guina, M.
Author_Institution
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
We review our results concerning the development of Semiconductor Disk Lasers with emission wavelength in the range of 1100-1200 nm. In particular, we highlight our recent demonstrations of SDLs with an output power of more than 20 W for emission around 1180 nm and corresponding frequency doubled power of more than 10 W at around 589 nm. The SDL gain chips utilize either dilute nitride (GaInNAs) or low-temperature GaInAs quantum wells.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser beams; quantum well lasers; wide band gap semiconductors; GaInAs; GaInNAs; SDL gain chips; dilute nitride; emission wavelength; frequency doubled power; high power semiconductor disk lasers; laser output power; low-temperature quantum wells; wavelength 1100 nm to 1200 nm; Plasma temperature; Power generation; Pump lasers; Strain; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600299
Filename
6600299
Link To Document