Title :
AlGaN/GaN ChemFET devices as biosensors for detection and characterization of photosystem I reaction centers
Author :
Eliza, Sazia A. ; Mostafa, Salwa ; Islam, Syed K. ; Lee, Ida ; Evans, Barbara ; Greenbaum, Elias
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
Photosystem reaction centers are special biomolecules found in oxygenic plants that absorb photons with high quantum efficiency, resulting in a separation of charges and the development of electrostatic potential across the reaction centers. This paper reports the performance of AlGaN/GaN ChemFETs configured as a floating gate transistor to characterize Photosystem I (PSI) reaction centers and presents a physical model to determine the number of PSIs immobilized on the gate surface of the device.
Keywords :
III-V semiconductors; aluminium compounds; bioelectric potentials; biosensors; gallium compounds; ion sensitive field effect transistors; molecular biophysics; wide band gap semiconductors; AlGaN-GaN; ChemFET device; Photosystem I reaction centers; biomolecules; biosensors; electrostatic potential; floating gate transistor; Aluminum gallium nitride; Biosensors; Educational institutions; Electron mobility; Electrostatics; Gallium nitride; HEMTs; Lighting; MODFETs; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378330
