Title :
Directly InGaN-laser diode pumped Ti:Sapphire laser
Author :
Sawai, Shota ; Kawauchi, Hikaru ; Hirosawa, Kenichi ; Kannari, Fumihiko
Author_Institution :
Dept. of Electron. & Electr. Eng., Keio Univ., Yokohama, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We report InGaN-laser diode pumped Ti:Sapphire laser using a 2.5-mm-long crystal with a figure-of-merit (FOM) of ~100. CW lasing at wavelength of 800 nm with a maximum average output power of 28.6 mW is obtained.
Keywords :
laser transitions; optical pumping; sapphire; solid lasers; titanium; Al2O3:Ti; CW lasing; figure-of-merit; laser diode pumped titanium-sapphire laser; laser transition; power 28.6 mW; size 2.5 mm; wavelength 800 nm; Crystals; Laser excitation; Laser mode locking; Pump lasers; Semiconductor lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600309
