• DocumentCode
    3061577
  • Title

    Influence of grit-size and sintering temperature on SiC target during pulsed laser deposition

  • Author

    Bhimasingu, Venkataramesh ; Pannirselvam, Emmanuel ; Vasa, Nilesh J.

  • Author_Institution
    Indian Inst. of Technol. Madras, Chennai, India
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Pulsed laser deposition of SiC thin films on N-type Si (100) substratewas studied by using an Nd3+: YAG laser. SiC target with agrit-count of 500 and sintered at 1600 °C was found suitable.
  • Keywords
    laser sintering; neodymium; pulsed laser deposition; silicon compounds; solid lasers; wide band gap semiconductors; N-type substrate; SiC; YAG:Nd3+; grit-size influence; pulsed laser deposition; sintering temperature; temperature 1600 C; temperature 500 C; thin films; Laser sintering; Pulsed laser deposition; Semiconductor lasers; Silicon; Silicon carbide; Substrates; Temperature; photovoltaics; pulsed laser deposition; semiconductor thin film; silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600323
  • Filename
    6600323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3061577