ZnCdSe-ZnSe heterostructures grown by MOVPE: influence of the cadmium precursor

Author

Sanchez, S. ; Cloitre, T. ; Bigenwald, P. ; Chergui, A. ; Honerlague, B. ; Aulombard, R.L.

Author_Institution

Groupe d´´Etudes des Semicond., Univ. des Sci. et Tech. du Languedoc, Montpellier, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

115

Lastpage

118

Abstract

Graded index separate confinement heterostructures (GRIN-SCH) for microgun blue-green laser were grown by MOVPE. A first study was carried out using selenium hydride, dimethyl cadmium and two dimethylzine adducts as Se, Cd and Zn precursor respectively. This combination leads to intense prereactions and poor layer morphology. To limit this problem we have then used the tetrahydrothiophene:dimethylcadmium adduct. We have first investigated the quality of thick ZnCdSe layers grown using this adduct. GRIN-SCH structures grown using the two cadmium metalorganics were studied using photoluminescence and optical pumping experiments. Stimulated emission was observed for the two kind of samples

Keywords

II-VI semiconductors; cadmium compounds; gradient index optics; optical pumping; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor lasers; stimulated emission; vapour phase epitaxial growth; wide band gap semiconductors; zinc compounds; Cd precursor; GRIN-SCH; MOVPE; ZnCdSe-ZnSe; ZnCdSe-ZnSe heterostructures; cadmium metalorganics; dimethyl cadmium; dimethylzine adducts; graded index separate confinement heterostructures; layer morphology; microgun blue-green laser; optical pumping; photoluminescence; prereactions; selenium hydride; stimulated emission; tetrahydrothiophene:dimethylcadmium adduct; Cadmium; Epitaxial growth; Epitaxial layers; Morphology; Optical pumping; Pump lasers; Semiconductor device doping; Semiconductor lasers; Surface emitting lasers; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570914

Filename

570914