DocumentCode :
3062773
Title :
Microcavity engineering using plasma immersion ion implantation
Author :
Chu, Paul K.
Author_Institution :
City Univ. of Hong Kong, Kowloon, Hong Kong
fYear :
1998
fDate :
1998
Firstpage :
83
Lastpage :
86
Abstract :
Microcavities or bubbles formed by hydrogen and helium plasma immersion ion implantation (PIII) possess intriguing properties. For example, they emit light similar to porous silicon, but because they are buried, the optical properties are not affected by surface conditions such as those encountered by conventional porous silicon materials. These bubbles also form excellent internal gettering sites for metallic impurities and are stable even at high temperature. Last but not least, the ion-cut/bonding technology utilizing the mechanical stress created by these microcavities to achieve thin film transfer is used to fabricate silicon-on-insulator (SOI)
Keywords :
bubbles; elemental semiconductors; getters; helium; hydrogen; ion implantation; photoluminescence; silicon; silicon-on-insulator; voids (solid); SOI; Si:H; Si:He; bubbles; internal gettering sites; ion-cut/bonding technology; mechanical stress; metallic impurities; microcavities; plasma immersion ion implantation; thin film transfer; Helium; Hydrogen; Microcavities; Optical films; Optical materials; Particle beam optics; Plasma immersion ion implantation; Plasma properties; Silicon on insulator technology; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.785800
Filename :
785800
Link To Document :
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