Title :
Fabrication of UV-LED using ZnO nanowires directly grown on p-GaN film by NAPLD
Author :
Tetsuyama, N. ; Ishida, Yuuki ; Higashihata, M. ; Nakamura, Daisuke ; Okada, Takashi
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We report the direct of ZnO nanowires on a p-GaN film by Nano-particle Assisted Pulsed Laser Deposition (NAPLD) and the ultra-violet electroluminescence characteristic from the fabricated p-n heterojunction LED.
Keywords :
II-VI semiconductors; III-V semiconductors; electroluminescence; gallium compounds; light emitting diodes; nanoparticles; nanowires; pulsed laser deposition; ultraviolet sources; wide band gap semiconductors; zinc compounds; GaN; NAPLD; UV-LED; ZnO; light emitting diodes; nanoparticle assisted pulsed laser deposition; nanowires; p-n heterojunction LED; ultraviolet electroluminescence; Fabrication; Films; Gallium nitride; Heterojunctions; Light emitting diodes; Nanowires; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600380
