DocumentCode
3063075
Title
Low-frequency noise in GaAs and InP Schottky diodes
Author
Sato, K.F. ; Chan, C.W. ; Najita, K. ; DeLisio, M.P. ; Chung, Y.H. ; Cowles, J. ; Grossman, P.C. ; Lai, R. ; Oki, A.K. ; Streit, D.C. ; Wang, H.
Author_Institution
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
Volume
3
fYear
1998
fDate
7-12 June 1998
Firstpage
1695
Abstract
This paper examines the low-frequency noise properties of millimeter-wave GaAs and InP Schottky diodes. Measurements of diodes fabricated using both HEMT and HBT epitaxy will be presented. These noise measurements should enable the development of accurate models useful in the analysis and design of MMIC components.
Keywords
III-V semiconductors; Schottky diodes; gallium arsenide; indium compounds; millimetre wave diodes; semiconductor device noise; GaAs; HBT epitaxy; HEMT epitaxy; InP; low-frequency noise; millimeter-wave Schottky diode; Epitaxial growth; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Low-frequency noise; Millimeter wave measurements; Noise measurement; Schottky diodes; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Print_ISBN
0-7803-4471-5
Type
conf
DOI
10.1109/MWSYM.1998.700706
Filename
700706
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