DocumentCode
3063076
Title
Hydrogen environment anisotropie thermal etching (HEATE) of GaN for the fabrication of high-aspect nano structure
Author
Hachiya, Hiroyuki ; Kikuchi, A.
Author_Institution
Sophia Univ., Tokyo, Japan
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
High temperature hydrogen etching properties of (0001) GaN under various hydrogen pressures and temperature was systematically investigated. We found a specific selective etching condition with high-anisotropy which applicable for the fabrication of high-aspect nanostructures.
Keywords
III-V semiconductors; etching; gallium compounds; wide band gap semiconductors; (0001) GaN; GaN; HEATE; high temperature hydrogen etching; high-aspect nanostructure; hydrogen environment anisotropic thermal etching; hydrogen pressures; hydrogen temperature; Conferences; Electrooptical waveguides; Lasers and electrooptics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600386
Filename
6600386
Link To Document