DocumentCode
3063156
Title
Theory and simulation of SiGe anode LIGBT
Author
Li, Ping ; You, Mengsi ; Su, Yajuan ; Li, Xuening
Author_Institution
Res. Inst. of Microelectr., Univ. of Electron. Sci. & Technol. of China, Hefei, China
fYear
1998
fDate
1998
Firstpage
156
Lastpage
159
Abstract
A novel high-speed heterojunction power device, SiGe anode lateral insulated gate bipolar transistor (SiGe-A-LIGBT), is proposed and verified by 2-D simulation in this paper. It is shown that the SiGe-A-LIGBT has all of the advantages of the Schottky injection FET (SINFET), while overcoming its disadvantages, such as the repetition and the controllability of the process, and the adjustability of the injection level of the minority carrier
Keywords
Ge-Si alloys; insulated gate bipolar transistors; minority carriers; power bipolar transistors; semiconductor device models; semiconductor materials; 2D simulation; LIGBT; SiGe; high-speed heterojunction power device; injection level; lateral insulated gate bipolar transistor; minority carrier; process controllability; Anodes; Conductivity; Degradation; Germanium silicon alloys; Heterojunctions; Insulated gate bipolar transistors; MOSFET circuits; Power integrated circuits; Schottky barriers; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-4306-9
Type
conf
DOI
10.1109/ICSICT.1998.785835
Filename
785835
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