Title :
High speed low cost BiCMOS for RF applications using profile engineering
Author :
Minghui, Gao ; Haijun, Zhao ; Bandyopadhyay, Abhijit ; Jiang, Cao ; Dow, Foo Pang
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
This paper describes a low cost, CMOS foundry compatible BiCMOS process for 1.9 GHz RF applications. It keeps the simple feature of the triple-well single-poly approach while achieving much higher fT by utilizing novel c-well profile engineering to reduce base and collector series resistance
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; high-speed integrated circuits; integrated circuit technology; 1.9 GHz; CMOS foundry compatible process; RF applications; base series resistance reduction; c-well profile; collector series resistance reduction; high speed BiCMOS; low cost BiCMOS; profile engineering; triple-well single-poly process; Application specific integrated circuits; BiCMOS integrated circuits; Bipolar transistors; CMOS process; Costs; Foundries; Frequency response; Implants; Radio frequency; Radiofrequency integrated circuits;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785845
