Title :
The voltage controlled current bistability (VCCB) in DUBAT
Author :
Weilian, Guo ; Yuanfen, Zheng ; Yuxing, Song ; Yunguang, Zheng ; Shurong, Li
Author_Institution :
Sch. of Electron. Inf. Eng., Tianjin Univ., China
Abstract :
In this paper the voltage controlled current bistability (VCCB) hysteresis loop has been found in the IC-VBE characteristics for the DUal BAse transistor (DUBAT). The ratio of high current to low current (R) is 945 and the width of bistability loop is 3.38 V. The minimum rise time tτ of VCCB is near 40 ns. It is possible that VCCB of DUBAT can be used to make a Static Random Access Memories (SRAM) cell in the near future
Keywords :
SRAM chips; bipolar transistors; hysteresis; negative resistance devices; stability; DUBAT; I-V characteristics; SRAM cell; dual base transistor; hysteresis loop; static RAM cell; static random access memories; voltage controlled current bistability; Bipolar transistors; Diodes; Hysteresis; Logic devices; Manufacturing; Random access memory; Resonance; SRAM chips; Silicon; Voltage control;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785848
