• DocumentCode
    3063382
  • Title

    Advanced silver metallization for ULSI applications

  • Author

    Alford, Terry L.

  • Author_Institution
    Dept. of Chem., Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    1998
  • fDate
    1998
  • Firstpage
    202
  • Lastpage
    205
  • Abstract
    In an attempt to make Ag-metallization more compatible with current IC manufacturing, we have successfully dry-etched Ag in oxygen plasma. The metallisation system uses an Ag/Ti/SiO2 stack structure
  • Keywords
    ULSI; integrated circuit metallisation; plasma materials processing; silicon compounds; silver; sputter etching; titanium; Ag-Ti-SiO2; Ag-metallization; Ag/Ti/SiO2 stack structure; IC manufacturing; ULSI applications; dry-etch; metallisation system; oxygen plasma; silver metallization; Annealing; Conductivity; Encapsulation; Metallization; Optical films; Optical scattering; Plasma temperature; Silver; Ultra large scale integration; X-ray diffraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
  • Conference_Location
    Beijing
  • Print_ISBN
    0-7803-4306-9
  • Type

    conf

  • DOI
    10.1109/ICSICT.1998.785853
  • Filename
    785853
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3063382