Piezoelectric MEMS stress sensor with thin lead zirconate titanate (PZT) layer

Author

Kolev, G. ; Aleksandrova, Marharyta ; Videkov, V. ; Denishev, K. ; Truhchev, P.

Author_Institution

Dept. of Microelectron., Tech. Univ. Sofia, Sofia, Bulgaria

fYear

2012

fDate

20-22 Nov. 2012

Firstpage

991

Lastpage

993

Abstract

In this study results from fabrication and testing of MEMS stress sensor with piezoelectric sensitive layer of lead zirconate titanate (PZT) are presented. PZT layers are deposited by RF-sputtering in vacuum. The dependence of the voltage, generated by the structure, on the applied stress is investigated for two different electrode configurations - sandwich type and lateral type, with aluminum electrodes. The obtained results show high piezoelectric coefficient of 186 pC for thickness of PZT-layer of 180 nm. The maximal generated voltage is 35 mV for lateral structure in the stress range of 0-300 mgr. The sandwich structure is sensitive above 1,1 gr and the maximal voltage is 200 mV.

Keywords

electrodes; lead compounds; microsensors; piezoelectric transducers; sputter deposition; stress measurement; vacuum deposition; PZT; RF-sputtering; aluminum electrodes; electrode configurations; piezoelectric MEMS stress sensor; piezoelectric coefficient; piezoelectric sensitive layer; size 180 nm; thin lead zirconate titanate layer; voltage 200 mV; voltage 35 mV; Electrodes; Micromechanical devices; Sputtering; Stress; Substrates; Voltage measurement; MEMS; PZT; piezoelectric; sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Forum (TELFOR), 2012 20th

Conference_Location

Belgrade

Print_ISBN

978-1-4673-2983-5

Type

conf

DOI

10.1109/TELFOR.2012.6419376

Filename

6419376