Title :
RF modeling issues of deep-submicron MOSFETs for circuit design
Author :
Cheng, Yuhua ; Schroter, Michael ; Enz, Christian ; Matloubian, Mishel ; Pehlke, David
Author_Institution :
Semicond. Syst., Rockwell Int. Corp., Newport Beach, CA, USA
Abstract :
This paper provides an overview of important issues in CMOS MOSFET modeling for radio frequency (RF) applications. Beginning with a brief review of state-of-the-art of RF CMOS technology, we discuss modeling issues that need to be resolved to meet the requirements from circuit designers. Then, we present our current achievements and activities in compact MOSFET modeling for RF circuit design
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit modelling; reviews; semiconductor device models; CMOS MOSFET modeling; RF CMOS technology; RF circuit design; RF modeling; circuit design; compact MOSFET modeling; deep-submicron MOSFETs; overview; radio frequency applications; review; state-of-the-art; CMOS process; CMOS technology; Circuit simulation; Circuit synthesis; Costs; MOSFETs; Predictive models; Radio frequency; Semiconductor device modeling; Silicon;
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
DOI :
10.1109/ICSICT.1998.785910
