DocumentCode :
3064673
Title :
An unified model to characterize the strong inversion high-frequency capacitance in thin oxide MOS structures under Fowler-Nordheim tunneling injection condition
Author :
Xie, Bing ; He, Yandong ; Xu, Mingzhen ; Tan, Changhua
Author_Institution :
Inst. of Microelectron., Beijing Univ., China
fYear :
1998
fDate :
1998
Firstpage :
447
Lastpage :
449
Abstract :
A detailed analysis of the strong inversion high frequency capacitance under the Fowler-Nordheim (FN) tunneling injection is of great relevance for the modeling and characterization of the thin oxide MOS devices and full exploration of the capabilities of floating gate EEPROM. We found that the F-N current strongly affects the transient capacitance in the thin oxide MOS structures and has different behavior in an NMOS capacitor (NMOSC) and a PMOS capacitor (PMOSC). The quasi-equilibrium capacitance decreases for PMOSC and increases for NMOSC with increasing F-N current. In this paper, we present an unified physical model that relates the dynamics of the surface charge region of thin oxide PMOS and NMOS structures to the F-N tunneling injection
Keywords :
EPROM; MOS capacitors; capacitance; semiconductor device models; tunnelling; F-N current; Fowler-Nordheim tunneling injection condition; NMOS capacitor; PMOS capacitor; characterization; floating gate EEPROM; high-frequency capacitance; quasi-equilibrium capacitance; strong inversion HF capacitance; surface charge region; thin oxide MOS structures; transient capacitance; unified physical model; Capacitance; Charge carrier density; Frequency; Helium; MOS devices; Microelectronics; Pulse measurements; Radiative recombination; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated Circuit Technology, 1998. Proceedings. 1998 5th International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-4306-9
Type :
conf
DOI :
10.1109/ICSICT.1998.785918
Filename :
785918
Link To Document :
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