Multilayered Barium Titanate Thin Films by Sol-Gel Method for Nonvolatile Memory Application

Author

Yu-Chi Chang ; Ren-Yang Xue ; Yeong-Her Wang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

61

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

4090

Lastpage

4097

Abstract

The modification of multispin casting multilayered barium titanate (BTO) thin films on indium tin oxide (ITO)/glass substrate without doping other elements is adopted to improve the memory performance. The X-ray photoelectron spectroscopy analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTO layer. Mechanisms of conducting paths relating to the concentration of oxygen vacancies will also be explicated. The memory devices showed typical bipolar resistive switching behavior and an ON/OFF ratio of over 10⁶. The memory devices also exhibited outstanding uniformity. A retention time of over 10⁵ s without fluctuation at room temperature and 85 °C can be achieved.

Keywords

X-ray photoelectron spectra; barium compounds; bipolar memory circuits; indium compounds; multilayers; resistive RAM; semiconductor doping; sol-gel processing; thin film devices; BaTiO₃; ITO; X-ray photoelectron spectroscopy analysis; bipolar resistive switching behavior; glass substrate; indium tin oxide; memory devices; multilayered barium titanate thin films; multispin casting; nonvolatile memory application; oxygen vacancies; room temperature; sol-gel method; temperature 85 degC; Electrodes; Indium tin oxide; Substrates; Surface morphology; Surface treatment; Temperature measurement; Barium titanate (BTO); memory; multilayer; resistive random access memory (RRAM); sol-gel; sol-gel.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2363651

Filename

6949144